Comprehensive Examination of Intrinsic-Parameter-Induced Characteristic Fluctuations in 16-nm-Gate CMOS Devices
نویسندگان
چکیده
Intrinsic parameter fluctuations on device characteristic and yield are crucial in determining the operation of nanoscale semiconductor devices. In this paper, we examine the fluctuations of the threshold voltage (Vth), gate capacitance (Cg), and cutoff frequency (FT) of emerging metal/high-κ gate planar complementary metal-oxidesemiconductor (CMOS) field effect transistors (FETs) variability including metal-gate-workfunction fluctuation (WKF), random-dopant fluctuation (RDF), and processvariation effect (PVE). An experimentally validated 3D “atomistic” simulation allows us to investigate the effect of aforementioned fluctuation sources on device DC/AC property. The preliminary results show that RDF and WKF dominate the device DC characteristics for n-type MOSFET (NMOS) and p-type MOSFET (PMOS), respectively. PVE affects CMOS device AC characteristics, especially at high gate bias.
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